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Provisional Data Sheet No. PD-9.1388A
REPETITIVE AVALANCHE AND dv/dt RATED
IRFM260
N-CHANNEL
HEXFET
(R)
TRANSISTOR
200Volt, 0.060, HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits, and virtually any application where high reliability is required. HEXFET transistor's totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.
Product Summary
Part Number IRFM260 BVDSS 200V RDS(on) 0.060 ID 35A*
Features:
n n n n n
Hermetically Sealed Electrically Isolated Simple Drive Requirements Ease of Paralleling Ceramic Eyelet
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25C I D @ VGS = 10V, TC = 100C IDM PD @ TC = 25C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight
Pre-Radiation
IRFM260
35* 28 180 250 2.0 20 700 35 25 4.3 -55 to 150
oC
Units A
W W/K V mJ A mJ V/ns
300(0.063 in.(1.6mm) from case for 10s) 9.3 (typical)
g
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IRFM260
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS /TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
200 -- -- -- 2.0 22 -- -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.24 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 8.7 8.7 -- -- 0.060 0.068 4.0 -- 25 250 100 -100 230 40 110 29 120 110 92 -- -- V V/C V S( ) A
Test Conditions
VGS =0 V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 10V, ID = 28A VGS = 10V, ID = 35A VDS = VGS, ID = 250A VDS > 15V, IDS = 28A VDS= 0.8 x Max Rating,VGS=0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125C VGS = 20 V VGS = -20V VGS = 10V, ID = 35A VDS = Max Rating x 0.5 VDD = 100V, ID = 35A, RG = 2.35
IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance
nA nC
ns
nH
Measured from drain lead, 6mm (0.25 in) from package to center of die. Measured from source lead, 6mm (0.25 in) from package to source bonding pad.
Modified MOSFETsymbol showing the internal inductances.
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
5100 1100 280
-- -- --
pF
VGS = 0V, VDS = 25 V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS I SM VSD trr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 35* 180 1.8 420 4.9
Test Conditions
Modified MOSFET symbol showing the integral reverse p-n junction rectifier. Tj = 25C, IS = 35A, VGS = 0V Tj = 25C, IF = 35A, di/dt 100A/s VDD 50V
A
V ns C
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient
Min Typ Max
-- -- -- -- 0.50 0.21 -- -- 48
Units
Test Conditions
K/W Mounting surface flat, smooth, and greased Typical socket mount
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IRFM260
1000
I , D ra in -to -S o u rce C u rre n t (A ) D
100
I , D ra in -to -S o u rc e C u rre n t (A ) D
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V TOP
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V TOP
100
10
10
4.5 V
4.5 V 2 0 s PU LSE W ID TH TC = 2 5C
0.1 1 10
1
A
1 0.1 1
20 s PU L SE W ID TH T J = 1 50 C
10
A
100
100
V D S , D rain-to-S ource V oltage (V )
V D S , Drain-to-Source V oltage (V)
Fig 1. Typical Output Characteristics, TJ = 25oC
1000
Fig 2. Typical Output Characteristics, T J = 150oC
2.5
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce (N o rm a li ze d )
I D = 46 A
I D , D r ain- to-S ourc e C urre nt (A )
2.0
100
1.5
T J = 1 5 0 C TJ = 2 5 C
10
1.0
0.5
1 4 5 6 7
VD S = 5 0 V 2 0 s PU L SE W ID TH
8 9 10
A
0.0 -60 -40 -20 0 20 40 60 80
V G S = 10 V
100 120 140 160
A
V G S , Ga te-to-S o urce V oltage (V )
T J , Junction T emperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFM260
12000
20
V G S , G a te -to -S o u rc e V o lta g e (V )
10000
V GS C iss C rss C oss
= = = =
0V , f = 1M H z C gs + C gd , C ds S H O R T E D C gd C d s + C gd
I D = 35 A V DS = 16 0V V DS = 10 0V V DS = 40 V
16
C , C a p a c ita n c e (p F )
C is s
8000
12
6000
C os s
8
4000
C rs s
2000
4
0 1 10 100
A
0 0 50 100
FO R TEST C IRC U IT SEE FIG UR E 13
150 200 250
A
V D S , Drain-to-Source V oltage (V )
Q G , T otal G ate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
I S D , R e v e rse D ra in C u rre n t (A )
OPE R ATIO N IN TH IS A RE A LIMITE D BY R D S(o n)
I D , D ra in C u rre n t (A )
100
100
10 s
TJ = 15 0C TJ = 2 5C
10
100 s
10
1m s
1 0.0 1.0 2.0 3.0
VG S = 0 V
A
1 1
T C = 25 C T J = 15 0C S ing le Pulse
10 100
10 ms
4.0
A
1000
V S D , S ource-to-Drain Voltage (V )
V D S , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRFM260
VDS
50
RD
VGS
LIM ITE D B Y P ACK AG E
D.U.T.
+
RG
-VDD
40
I D , D ra in C u rre n t (A m p s)
10V
Pulse Width 1 s Duty Factor 0.1 % 30
Fig 10a. Switching Time Test Circuit
20
VDS 90%
10
0 25 50 75 100 125
A
150
10% VGS
td(on) tr t d(off) tf
TC , C ase T emperature (C)
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
1
T her m al R e spon se ( Z th J C )
D = 0.50
0.1
0.20 0.10 0.05 0.02 0.01 SING LE P ULSE (T HERMA L RES PO NSE)
N otes : 1 . D uty fac tor D = t PD M
0.01
t
1 t2
1
/t
2
0.001 0.00001
2. P eak TJ = P D M x Z th J C + T C
A
10
0.0001
0.001
0.01
0.1
1
t 1 , Re ctang ular P ulse D uration (sec )
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFM260
1600
E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
TO P B OTTO M
1200
15 V
ID 16 A 2 2A 35 A
VDS
L
D R IV E R
800
RG 2 0V tp
D .U .T
IA S 0 .0 1
+ - VDD
A
400
Fig 12a. Unclamped Inductive Test Circuit
V (BR )D SS tp
0 25 50 75 100 125
A
150
Starting T J , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K 12V .2F .3F
QG
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRFM260
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
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IRFM260
Case Outline and Dimensions TO-254AA
.1 2 ( .00 5 ) 3 .78 ( .1 49 ) 3 .53 ( .1 39 ) - A13 .84 ( .5 4 5 ) 13 .59 ( .5 3 5 ) -B 6.6 0 ( .26 0 ) 6.3 2 ( .24 9 ) 1 .27 ( .0 50 ) 1 .02 ( .0 40 )
.1 2 ( .0 05 ) 3 .7 8 ( .14 9 ) 3 .5 3 ( .13 9 ) -A 1 3 .8 4 ( .54 5 ) 1 3 .5 9 ( .53 5 ) -B6.6 0 ( .26 0 ) 6.3 2 ( .24 9 ) 1 .27 ( .05 0 ) 1 .02 ( .04 0 )
1 7.40 ( .6 85 ) 1 6.89 ( .6 65 ) 3 1.4 0 ( 1.2 35 ) 3 0.3 9 ( 1.1 99 )
20 .32 ( .8 00 ) 20 .07 ( .7 90 )
2 1.9 8 ( .86 5 ) 2 0.9 5 ( .82 5 ) 1 3.8 4 ( .5 4 5 ) 1 3.5 9 ( .5 3 5 ) L EGE ND 1 - C OL L EC TOR W 2 - EMITTER 3 - GATE
1 7 .40 ( .6 85 ) 1 6 .89 ( .6 65 )
2 0 .3 2 ( .8 00 ) 2 0 .0 7 ( .7 90 )
1 3.8 4 ( .54 5 ) 1 3.5 9 ( .53 5 )
1 .5 2 ( .0 60 ) R M IN .
1
2
3 -C 3 .2 3.1
1
2
3 -C -
3X 3 .8 1 ( .1 50 ) 2X
1 .14 ( .0 45 ) 0 .89 ( .0 35 ) M CAMB MC
.5 0 ( .02 0 ) .2 5 ( .01 0 )
4 .01 ( .15 8 ) 3 .61 ( .14 2 )
4 .8 3 ( .1 90 ) 3 .8 1 ( .1 50 )
3X 3 .81 ( .1 50 ) 2X
1 .14 ( .0 45 ) 0 .89 ( .0 35 ) .50 ( .0 2 0 ) .25 ( .0 1 0 ) MC AMB MC
3.8 1 ( .15 0 )
N OTE S: 1 . D IME NS ION IN G & TOLE RA NC IN G PE R AN SI Y 14 .5M, 1 98 2. 2 . AL L D IM EN SIONS A RE S HOW N IN MILL IMETER S ( IN C HE S ).
N OTE S : 1. DIME NS ION ING & TOL ER AN C IN G PE R AN S I Y1 4 .5 M-1 9 82 . 2. AL L D IM EN SIONS AR E SH OW N IN MIL LIMETE R S ( IN C HE S ). 3. LE AD FOR M IS A VA IL ABL E IN E ITH ER OR IEN TA TION : 3.1 EXAM PL E : IR FM4 50 0 3.2 EXAM PL E : IR FM4 50 U
L EGE ND 1 - C OLL EC TOR 2 - EM ITTE R 3 - GATE
Conforms to JEDEC Outline TO-254AA Dimensions in Millimeters and ( Inches ) CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations perfomed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
Notes:
Repetitive Rating; Pulse width limited by @ VDD = 50 V, Starting TJ = 25C, ISD 35A, di/dt 130 A/s,
VDD BVDSS, TJ 150C Suggested RG = 2.35 maximum junction temperature. EAS = [0.5 * L * (IL2) ] Refer to current HEXFET reliability report. Peak IL = 35A, VGS =10 V, 25 RG 200 Pulse width 300 s; Duty Cycle 2% K/W = C/W * ID current limited by pin diamete ( Die Current = 46A )
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 7/96
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